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June 2009
IRS26302DJPBF
FULLY PROTECTED 3-PHASE BRIDGE PLUS ONE GATE DRIVER Features
* * * * * * * * * * * * * * * * * * * * Floating channel designed for bootstrap operation, fully operational to +600 V Tolerant to negative transient voltage - dV/dt immune Full three phase gate driver plus one low side driver Undervoltage lockout for all channels Cross-conduction prevention logic Power-on reset Integrated bootstrap diode for floating channel supply Over current protection on: DC-(Itrip), DC+(Ground fault), PFCtrip/BRtrip (PFC/Brake protection). Single pin fault diagnostic function Diagnostic protocol to address fault register Self biasing for ground fault detection high voltage circuit 3.3 V logic compatible Lower di/dt gate drive for better noise immunity Externally programmable delay for automatic fault clear RoHS compliant Air conditioners inverters Micro/Mini inverter drives General purpose inverter Motor control
Product Summary
Topology VOFFSET VOUT Io+ & I o- (typical) Deadtime (typical) 3 Phase 600 V 10 V - 20 V 200 mA & 350 mA 290 ns
Package
Typical Applications
44-Lead PLCC
Typical Connection Diagram
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IRS26302DJ
Table of Contents
Description Simplified Block Diagram Typical Application Diagram Qualification Information Absolute Maximum Ratings Recommended Operating Conditions Static Electrical Characteristics Dynamic Electrical Characteristics Functional Block Diagram Input/Output Pin Equivalent Circuit Diagram Lead Definitions Lead Assignments Application Information and Additional Details Parameter Temperature Trends Package Details Tape and Reel Details Part Marking Information Ordering Information
Page
3 3 4 5 6 7 8 10 12 13 14 15 16 35 48 49 50 51
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Description
The IRS26302DJPBF are high voltage, high speed power MOSFET and IGBT drivers with three independent high and low side referenced output channels for 3-phase applications. An additional low side driver is included for PFC or Brake IGBT driving operation. Proprietary HVIC technology enables rugged monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 3.3V logic. Three current trip functions that terminate all seven outputs can be derived from three external shunt resistors. Each overcurrent trip functions consists of detecting excess current across a shunt resistor on DC+ bus, on DC- bus and on Brake or PFC circuitry. An enable function is available to terminate all outputs simultaneously and is provided through a bidirectional pin combined with an open-drain FAULT pin. Fault signal is provided to indicate that an overcurrent or undervoltage shutdown has occurred. Overcurrent fault conditions are cleared automatically after an externally programmed delay via an RC network connected to the RCIN input. A diagnostic feature can give back to the controller the fault cause (UVcc, DC- or DC- overcurrent) and address a fault register. The output drivers feature a high pulse current buffer stage. Propagation delays are matched to simplify use in high frequency applications designed for minimum driver cross conduction. The floating channel can be used to drive N-channel power MOSFET's or IGBT's in the high side configuration which operates up to 600 V.
Simplified Block Diagram
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Typical Application Diagram
DC+ BUS
V cc HIN (x3) AC main LIN (x3) FLT/EN
VDC
GF
VSDC
VB ( x3 )
IRS26302D
PCFin/BRin PCFout/BRout PCFtrip/BRtrip
HO ( x 3)
VS (x 3)
VS1
VS2 VS 3
To Load
RCIN ITRIP VSS DC - BUS
LO (x 3)
COM
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Qualification Information
Qualification Level
Industrial (per JEDEC JESD 47E) Comments: This family of ICs has passed JEDEC's Industrial qualification. IR's Consumer qualification level is granted by extension of the higher Industrial level. PLCC44 Machine Model MSL3 (per IPC/JEDEC J-STD-020C)
Moisture Sensitivity Level
ESD
Human Body Model Charged Device Model
IC Latch-Up Test RoHS Compliant
Class B (per JEDEC standard JESD22-A114D) Class 2 (per EIA/JEDEC standard EIA/JESD22-A115-A) Class IV (per JEDEC standard JESD22-C101C) Class I, Level A (per JESD78A) Yes
Qualification standards can be found at International Rectifier's web site http://www.irf.com/ Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information. Higher MSL ratings may be available for the specific package types listed here. Please contact your International Rectifier sales representative for further information.
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Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to VSS unless otherwise stated in the table. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Voltage clamps are included between VCC & COM (25 V), VCC & VSS (20 V), and VB & VS (20 V).
Symbol
VB1,2,3 VHO1,2,3 VS1,2,3 VDC GF VSDC VCC COM VLO1,2,3 VIN VPFCtrip/VBRtrip dV/dt PD RTHJA TJ TS TL
Definition
High side floating supply voltage High side floating output voltage High side offset voltage DCbus Supply Voltage Input voltage for Ground Fault detection High voltage return for Ground Fault circuit Low side and logic fixed supply voltage Power ground Low side output voltage LO1,2,3, PFCout Input voltage LIN1,2,3, HIN1,2,3, ITRIP, PFCtrip, FLTEN, RCIN Input voltage VPFCtrip/VBRtrip Allowable offset voltage slew rate Package power dissipation @ TA +25 C Thermal resistance, junction to ambient Junction temperature Storage temperature Lead temperature (soldering, 10 seconds)
Min.
-0.3 VS1,2,3 - 0.3 VB1,2,3 - 20 -0.3 VDC-20 VDC-20 -0.3 VCC - 25 -0.3 -0.3 -2 -- -- -- -- -55 --
Max.
620 VB1,2,3 + 0.3 VB 1,2,3 + 0.3 620 VDC+0.3 VDC+0.3 20 VCC + 0.3 VCC + 0.3 VCC + 0.3 VCC + 0.3 50 4.6 27 150 150 300
Units
V
V/ns W C/W C
All supplies are fully tested at 25 V. An internal 20 V clamp exists for each supply.
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Recommended Operating Conditions
For proper operation, the device should be used within the recommended conditions. All voltage parameters are absolute voltages referenced to VSS unless otherwise stated in the table. The offset rating is tested with supplies of (VCC-COM) = (VB-VS) = 15 V. For proper operation the device should be used within the recommended conditions.
Symbol
VB1,2,3 VHO 1,2,3 VS 1,2,3 VSt 1,2,3 VDC GF VSDC VCC VLO1,2,3 COM VSCOM VFLT VRCIN VHO 1,2,3 VLO1,2,3 VITRIP PFCITRIP /BRITRIP VIN TA
Definition
High side floating supply voltage High side output voltage HO1,2,3 High side floating supply voltage Transient high side floating supply voltage DCbus Supply Voltage Input voltage for Ground Fault detection High voltage return for Ground Fault circuit Low side supply voltage Low side output voltage LO1,2,3, PFCout Power ground Negative transient Vs voltage FAULT output voltage RCIN input voltage High side output voltage Low side output voltage ITRIP input voltage PFCITRIP/BRITRIP input voltage Logic input voltage LIN, HIN, PFCin, BRin, EN Ambient temperature
Min.
VS1,2,3 + 10 VS1,2,3 Vss - 8 -50 (TBD) VDC-5 VDC-12 10 0 -5 0 0 0 VS1,2,3 COM 0 -2 VSS -40
Max.
VS1,2,3 + 20 VB1,2,3 600 600 600 VDC VDC-11 20 VCC 5 -20
1)
Units
V
VCC VCC VB1,2,3 VCC 5 0 VSS +5 125 C

Logic operation for VS of -8 V to 600 V. Logic state held for VS of -8 V to -VBS. Please refer to Design Tip DT97-3 for more details. Operational for transient negative VS of VSS - 50 V with a 50 ns pulse width. Guaranteed by design. Refer to the Application Information section of this datasheet for more details.
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Static Electrical Characteristics
(VCC-COM) = (VB-VS) = 15 V. TA = 25C unless otherwise specified. The VIN and IIN parameters are referenced to VSS and are applicable to all six channels. The VO and IO parameters are referenced to respective VS and COM and are applicable to the respective output leads HO or LO. The VCCUV parameters are referenced to VSS. The VBSUV parameters are referenced to VS. The PFCIo/BRIo and VPFC/ VBR are referenced to VSS and are applicable to PFCout/BRout lead.
Symbol
VIH VIL VIN,TH+ VIN,THVIT,TH+ VIT,THVIT,HYS VPFCT,TH+ VBRT,TH+ VPFCT,THVBRT,THVPFCT,HYS VBRT,HYS VGFT,TH+ VGFT,THVGFT,HYS VRCIN,TH+ VRCIN,HYS VCC,UVTH+ VCC,UVTHVCC,UVHYS VBS,UVTH+ VBS, UVTHVBS,UVHS ILK Iqbs Iqcc Io+ IoVOH VOL
Definition
Logic "1" input voltage Logic "0" input voltage Input positive going threshold Input negative going threshold Input positive going threshold Input negative going threshold ITRIP hysteresis PFC/BR positive going threshold PFC/BR negative going threshold PFC/BR hysteresis GF positive going threshold GF negative going threshold GF hysteresis RCIN positive going threshold RCIN hysteresis VCC supply undervoltage positive going threshold VCC supply undervoltage negative going threshold VCC supply undervoltage hysteresis VBS supply undervoltage positive going threshold VBS supply undervoltage negative going threshold VBS supply undervoltage hysteresis Offset supply leakage current Quiescent VBS supply current Quiescent VCC supply current Output high short circuit pulsed current, HO1,2,3 Output low short circuit pulsed current, HO1,2,3 High level output voltage, VBIAS - VO, HO1,2,3 Low level output voltage, VO, HO1,2,3
Min
2.5 -- -- 0.8 0.160 0.144 -- -0.144 -0.160 -- 0.140 0.150 -- -- -- 10.2 10.0 -- 10.2 10.0 -- -- -- -- 100 190 -- --
Typ
-- -- 1.9 1 0.200 0.180 20 -0.180 -0.200 20 0.180 0.200 20 8 3 11.1 10.9 0.2 11.1 10.9 0.2 -- 45 2.5 200 350 0.9 0.4
Max
-- 0.8 2.5 -- 0.240 0.216 -- -0.216
Units
Test Conditions
V
mV V
-0.240 -- 0.220 0.240 -- -- -- 12.0 11.8 -- 12.0 11.8 -- 50 120 4 -- -- 1.4 0.6 mA V mA A VB1,2,3 = VDC = GF =600 V, VDC - VDCS = 20 V All input/output in off status All input/output in off status Vout = 0 V, PW www.irf.com
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Static Electrical Characteristics (continued)
(VCC-COM) = (VB-VS) = 15 V. TA = 25C unless otherwise specified. The VIN and IIN parameters are referenced to VSS and are applicable to all six channels. The VO and IO parameters are referenced to respective VS and COM and are applicable to the respective output leads HO or LO. The VCCUV parameters are referenced to VSS. The VBSUV parameters are referenced to VS. The PFCIo/BRIo and VPFC/ VBR are referenced to VSS and are applicable to PFCout/BRout lead.
Symbol
PFCIO+/ BRIO+ PFCIO-/ BRIOVPFCH /VBRH VPFCL /VBRL IIN+ IINIITRIP+ IITRIPIPFCTRIP+/ IBRTRIP+ IPFCTRIP/ IBRTRIPIRCIN IENIN Ron_RCIN RON_FLT RBS IqVdcon IqVdcoff
Definition
Output high short circuit pulsed current, PFCOUT /BROUT Output low short circuit pulsed current, PFCOUT/BROUT High level output voltage, VBIAS - VO, PFCOUT/BROUT low level output voltage, VO, PFCOUT/BROUT Input bias current LIN1,2,3, HIN1,2,3, PFCIN/BRIN, (OUT=HI) Input bias current LIN1,2,3, HIN1,2,3, PFCIN/BRIN, (OUT=LO) ITRIP input bias current ITRIP input bias current PFCTRIP /BRTRIP input bias current PFCTRIP /BRTRIP input bias current RCIN input bias current EN input bias current RCIN low on resistance FLT low on resistance Ron internal bootstrap diode Quiescent VDC supply current on status Quiescent VDC supply current off status
Min
120 210 -- -- 350 -- -- -- -- -- -- -- -- -- -- 100 100
Typ
250 430 900 400 -- 0 1 0 20 0 0 0 50 50 200 200 200
Max
--
Units
mA
Test Conditions PFCOUT = 0 V, PW -- 1400 600 860 1 2 5 -- 5 5 1 100 100 -- 300 300 A A mV
IO = 20 mA VIN = 3.3 V VIN = 0 V
VITRIP = 1 V VITRIP = 0 V VPFCTRIP =-250 mV VPFCTRIP = 0 V VRCIN = 15 V VEN = 3.3V
I = 1.5 mA I = 1.5 mA VDC - Vgf = 250 mV, VDC+ = 40 -600 V VDC = Vgf , VDC + = 40- 600 V
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Dynamic Electrical Characteristics
VCC= VB = 15 V, VS = VSS = COM, TA = 25C, and CL = 1000 pF unless otherwise specified.
Symbol
LOton , HOton LOtoff , HOtoff LOtr , HOtr LOtf ,HOtf PFCton/BRton
Definition
Turn-on propagation delay, LO1,2,3, HO1,2,3 Turn-off propagation delay, LO1,2,3, HO1,2,3 Turn-on rise time LO1,2,3, HO1,2,3 Turn-off fall time LO1,2,3, HO1,2,3 Turn-on propagation delay, PFCOUT/BROUT (CL = 2200pF) Turn-off propagation delay, PFCOUT/BROUT (CL = 2200pF) Turn-on rise time, PFCOUT/BROUT (CL= 2200 pF) Turn-off rise time, PFCOUT/BROUT (CL = 2200 pF) ENABLE low to output shutdown propagation delay ITRIP to output shutdown propagation delay ITRIP blanking time PFCTRIP to output shutdown propagation delay PFCTRIP/BRTRIP blanking time Input filter time (HIN, LIN, PFCIN /BRIN, EN) Enable input filter time Deadtime Ton, off matching time (on all six channels) DT matching (Hi->Lo & Lo->Hi on all channels) Pulse width distortion FAULT clear time RCIN: R=2meg, C=1nF ITRIP blanking time ITRIP to fault time ITRIP to output shutdown propagation delay
Min
320 320 -- -- 300
Typ
-- -- 125 50 --
Max
710 710 190 75 660
Units
Test Conditions
LIN = 0 V 3.3 V, HIN = 0 V LIN = 3.3 V 0 V, HIN = 0 V CLOAD = 1nF CLOAD = 1nF PFCIN = 0 V 3.3 V
PFCtoff/BRtoff PFCtr/BRtr PFCtf/BRtf tEN tITRIP tITRIPbl tPFCtrip tPFCbl/tBRbl tFILIN tfilterEn DT MT MDT PM tFLTCLR
300 -- -- 350 -- 250 -- -- 200 100 190 -- -- -- 40 250 800 500
-- 180 60 460 800 400 800 500 350 200 290 -- -- -- 60 400 1150 720
660 -- -- 650 -- 600 -- -- -- -- 420 50 60 75 80 600 1500 950 ns s ns
PFCIN = 3.3 V 0 V CLOAD = 2.2 nF CLOAD = 2.2 nF VIN, VEN = 0 V or 3.3 V VITRIP = 2 V VIN = 0 V or 3.3 V VITRIP = 2 V
VIN = 0 V & 3.3 V LIN = 3.3 V 0 V, HIN = 0 V 3.3 V
PW input = 10 us R = 100 K , C = 680 pF, on RCIN VITRIP = 0 V 2 V to FLT/En = 3.3 V 0 V VITRIP =0 V 2 V to LOx/Hox = 15 V 0 V
tITRIPBLK
tITRIPFLT tITRIPOUT

The minimum width of the input pulse is recommended to exceed 500 ns to ensure the filtering time of the input filter is exceeded. PM is defined as PW IN - PW OUT.
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Dynamic Electrical Characteristics
VCC= VB = 15 V, VS = VSS = COM, TA = 25 C, and CL = 1000 pF unless otherwise specified.
o
Symbol Definition
tITRIPPFC/tITRI
PBR
Min
400 700
Typ
620 1000
Max
850 1500
Units
Test Conditions
VITRIP = -1 V 2 V to PFCOUT/BROUT = 15 V 0 V VPFCTRIP/VBRTRIP = 1V -1.5 V V to FLT/En = 3.3 V 0V VPFCTRIP/VBRTRIP = 1V -1.5 V to LOx/Hox = 15 V 0 V VPFCTRIP/VBRTRIP = 1V -1.5 V to PFCOUT = 15 V 0 V
ITRIP to PFCout/BRout shutdown propagation delay PFCTRIP/BRTRIP to fault time PFCTRIP/BRTRIP to output shutdown propagation delay PFCTRIP/BRTRIP to PFC output shutdown propagation delay PFCTRIP/BRTRIP blanking time GFTRIP to fault time GFTRIP to output shutdown propagation delay GFTRIP to PFC output shutdown propagation delay GFTRIP blanking time EN on to output propagation delay EN off to output shutdown propagation delay EN on to PFC/Brake output propagation delay EN off to output shutdown PFC/Brake propagation delay Input to Hand shake mode delay Input to DIAG mode in delay Input to DIAG mode out delay
tPFCTRIPFLT /tBRTRIPFLT tPFCTRIPOUT /tBRTRIPOUT tPFCTRIPPFC /tBRTRIPPFC tPFCTRIPBLK /tBRTRIPBLK tGFTRIPFLT tGFTRIPOUT tGFTRIPPFC
400 320 150 1000 700 600 150 300
600 500 450 1400 1000 900 300 400
950 850 750 1800 1300 1200 550 500 ns
VGF = VDC VDC -1 V to FLT/En = 15 V 0 V VGF = VDC VDC -1 V to LOx/Hox = 15 V 0 V VGF = VDC VDC -1 V to PFCOUT = 15 V 0 V VEN = 0 V 3.3 V, LINx/HINx = 3.3 V to LOx/Hox = 0 V 15 V VEN = 3.3 V 0 V, LINx/HINx = 3.3 V to LOx/Hox = 15 V 0 V VEN = 0 V 3.3 V , PFCIN/BRIN = 3.3 V to PFCOUT/BROUT = 0 V 15 V VEN = 3.3 V 0 V, PFCIN/BRIN = 3.3 V to PFCOUT/BROUT =15 V 0 V See fault diagnostic state diagram
tGFTRIPBLK tENOUT tSDOUT tENPFC/tENB
R
320
440
560
200
320
500
tSDPFC/tSDB
R
200
360
500
tHANDSHAKE tDIAGIN tDIAGOUT
300
500
700
Note 1: A shoot-through prevention logic prevents LO1,2,3 and HO1,2,3 for each channel from turning on simultaneously. Note 2: UVCC is not latched, when VCC > UVCC, FAULT return to high impedance. Note 3: When ITRIP www.irf.com
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Functional Block Diagram
IRS 26302D
Bootstrap Schmitt Trigger & Input filter HV Level shifter Latch UV detect Driver
VB1 HO 1 VS1
Driver
Hin1 Lin1
Deadtime & Shoot through prevention
LO 1 VB2
Bootstrap Schmitt Trigger & Input filter Latch UV detect
Hin 2 Lin2
HV Level shifter Deadtime & Shoot through prevention
Driver
HO2 VS2 VCC VSS VB3 COM
Driver Bootstrap Schmitt Trigger & Input filter HV Level shifter Deadtime & Shoot through prevention Latch UV detect Driver
LO2
HO3 VS3
Hin3 Lin3
Schmitt Trigger & Input filter
Driver
LO3
PFCin/BRin
PFC/ BR logic
Driver
PFCout/ BRout
acknowledge
UV detect
DC +
Noise filter
RCin
Schmitt Trigger
GF DCS VCC VSS ITRIP
Fault and Diagnostic Logic
Schmitt Trigger & Input filter
HV level shifter latch
Noise filter
EN / FLT
FAULT REGISTER
Noise filter
PFCtrip/ BRtrip
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Input/Output Pin Equivalent Circuit Diagrams
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Lead Definitions
Symbol VSDC GF VDC HIN1,2,3 LIN1,2,3 PFCTRIP//BRTRIP PFCOUT/BROUT PFCIN/BRIN FAULT/EN ITRIP Description GF supply return GF analog input for DC + overcurrent shutdown. When active, GF shuts down outputs and activates FAULT and RCIN low. When GF becomes inactive, FAULT stays active low for an externally set time tFLTCLR, then automatically becomes inactive (open-drain high impedance). GF comparator supply (DC bus) Logic inputs for high side gate driver outputs (HO1,2,3), in phase Logic input for low side gate driver outputs (LO1,2,3), in phase Analog input for PCF overcurrent shutdown. When active, GF shuts down outputs and activates FAULT and RCIN low. When PFCTRIP//BRTRIP becomes inactive, FAULT stays active low for an externally set time tFLTCLR, then automatically becomes inactive (open-drain high impedance). PFC/Brake output Input, PFC/Brake, active high Open Drain and input, act high Analog input for DC - over-current shutdown. When active, ITRIP shuts down outputs and activates FAULT and RCIN low. When ITRIP becomes inactive, FAULT stays active low for an externally set time tFLTCLR, then automatically becomes inactive (open-drain high impedance). An external RC network input used to define the FAULT CLEAR delay (tFLTCLR) approximately equal to R*C. When RCIN > 8 V, the FAULT pin goes back into an open-drain high-impedance state. Logic ground Power ground & Analog input (ITRIP) Low side driver outputs Low side supply voltage High voltage floating supply return High side driver outputs High side floating supply
RCIN VSS COM LO1,2,3 VCC VS1,2,3 HO1,2,3 VB1,2,3
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Lead Assignments
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Application Information and Additional Details
Information regarding the following topics are included as subsections within this section of the datasheet. * * * * * * * * * * * * * * * * * * * * * IGBT/MOSFET Gate Drive Switching and Timing Relationships Deadtime Matched Propagation Delays Input Logic Compatibility Undervoltage Lockout Protection Shoot-Through Protection Enable Input Fault Reporting and Programmable Fault Clear Timer Over-Current Protection Over-Temperature Shutdown Protection Truth Table: Undervoltage lockout, ITRIP, and ENABLE Diagnostics Advanced Input Filter Short-Pulse / Noise Rejection Integrated Bootstrap Functionality Bootstrap Power Supply Design Separate Logic and Power Grounds Tolerant to Negative VS Transients PCB Layout Tips Additional Documentation
IGBT/MOSFET Gate Drive The IRS26302DJ HVICs are designed to drive MOSFET or IGBT power devices. Figures 1 and 2 illustrate several parameters associated with the gate drive functionality of the HVIC. The output current of the HVIC, used to drive the gate of the power switch, is defined as IO. The voltage that drives the gate of the external power switch is defined as VHO for the high-side power switch and VLO for the low-side power switch; this parameter is sometimes generically called VOUT and in this case does not differentiate between the high-side or low-side output voltage.
VB (or VCC)
VB (or VCC)
IO+
HO (or LO) + HO (or LO)
VHO (or VLO)
VS (or COM) VS (or COM)
IO-
Figure 1: HVIC sourcing current
Figure 2: HVIC sinking current
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Switching and Timing Relationships The relationship between the input and output signals of the IRS26302DJ are illustrated below in Figures 3. From this figure, we can see the definitions of several timing parameters (i.e., PW IN, PW OUT, tON, tOFF, tR, and tF) associated with this device.
LINx (or HINx)
50%
50%
PWIN
tON
tR 90% 10%
tOFF PWOUT 90%
tF
LOx (or HOx)
10%
Figure 3: Switching time waveforms The following two figures illustrate the timing relationships of some of the functionality of the IRS26302DJ; this functionality is described in further detail later in this document. During interval A of Figure 5, the HVIC has received the command to turn-on both the high- and low-side switches at the same time; as a result, the shoot-through protection of the HVIC has prevented this condition and both the highand low-side output are held in the off state. Interval B of Figures 5 and 6 shows that the signal on the ITRIP, GF, PCFtrip input pin has gone from a not active to an active state; as a result, all of the gate drive outputs have been disabled (i.e., see that HOx has returned to the low state; LOx is also held low), the voltage on the RCIN pin has been pulled to 0 V, and a fault is reported by the FAULT output transitioning to the low state. Once the ITRIP, GF, PCFtrip input has returned to the not active state, the output will remain disabled and the fault condition reported until the voltage on the RCIN pin charges up to VRCIN,TH (see interval C in Figure 6); the charging characteristics are dictated by the RC network attached to the RCIN pin. During intervals D and E of Figure 5, we can see that the enable (EN) pin has been pulled low (as is the case when the driver IC has received a command from the control IC to shutdown); this results in the outputs (HOx and LOx) being held in the low state until the enable pin is pulled high.
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A
HIN1,2,3 LIN1,2,3 PCFin FLT/EN
BC
D
E
ITRIP GF, PCFtrip RCIN
HO1,2,3 LO1,2,3 PCFout
Figure 4: Input/output timing diagram
Interval B
Interval C
VIT,TH+ ITRIP
VIT,TH-
FAULT
tFLT
50%
50%
RCIN
VRCIN,TH
HOx
tITRIP
90%
tFLTCLR
Figure 5: Detailed view of B & C intervals
Deadtime This family of HVICs features integrated deadtime protection circuitry. The deadtime for these ICs is fixed; other ICs within IR's HVIC portfolio feature programmable deadtime for greater design flexibility. The deadtime feature inserts a time period (a minimum deadtime) in which both the high- and low-side power switches are held off; this is done to ensure that the power switch being turned off has fully turned off before the second power switch is turned on. This minimum deadtime is automatically inserter whenever the external deadtime is shorter than DT; external deadtimes larger than DT are not modified by the gate driver. Figure 7 illustrates the deadtime period and the relationship between the output gate signals. The deadtime circuitry of the IRS26302DJ is matched with respect to the high- and low-side outputs of a given channel; additionally, the deadtimes of each of the three channels are matched. Figure 7 defines the two deadtime parameters (i.e., DT1 and DT2) of a specific channel; the deadtime matching parameter (MDT) associated with the IRS26302DJ specifies the maximum difference between DT1 and DT2. The MDT parameter also applies when comparing the DT of one channel of the IRS26302DJ to that of another.
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Figure 7: Illustration of deadtime
Matched Propagation Delays The IRS26302DJ is designed with propagation delay matching circuitry. With this feature, the IC's response at the output to a signal at the input requires approximately the same time duration (i.e., tON, tOFF) for both the low-side channels and the high-side channels; the maximum difference is specified by the delay matching parameter (MT). Additionally, the propagation delay for each low-side channel is matched when compared to the other low-side channels and the propagation delays of the high-side channels are matched with each other; the MT specification applies as well. The propagation turn-on delay (tON) of the IRS26302DJ is matched to the propagation turn-on delay (tOFF). Input Logic Compatibility The inputs of this IC are compatible with standard CMOS and TTL outputs. The IRS26302DJ has been designed to be compatible with 3.3 V and 5 V logic-level signals. Figure 8 illustrates an input signal to the IRS26302DJ, its input threshold values, and the logic state of the IC as a result of the input signal.
Figure 8: HIN & LIN input thresholds
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Undervoltage Lockout Protection This family of ICs provides undervoltage lockout protection on both the VCC (logic and low-side circuitry) power supply and the VBS (high-side circuitry) power supply. Figure 9 is used to illustrate this concept; VCC (or VBS) is plotted over time and as the waveform crosses the UVLO threshold (VCCUV+/- or VBSUV+/-) the undervoltage protection is enabled or disabled. Upon power-up, should the VCC voltage fail to reach the VCCUV+ threshold, the IC will not turn-on. Additionally, if the VCC voltage decreases below the VCCUV- threshold during operation, the undervoltage lockout circuitry will recognize a fault condition and shutdown the high- and low-side gate drive outputs, and the FAULT pin will transition to the low state to inform the controller of the fault condition. Upon power-up, should the VBS voltage fail to reach the VBSUV threshold, the IC will not turn-on. Additionally, if the VBS voltage decreases below the VBSUV threshold during operation, the undervoltage lockout circuitry will recognize a fault condition, and shutdown the high-side gate drive outputs of the IC. The UVLO protection ensures that the IC drives the external power devices only when the gate supply voltage is sufficient to fully enhance the power devices. Without this feature, the gates of the external power switch could be driven with a low voltage, resulting in the power switch conducting current while the channel impedance is high; this could result in very high conduction losses within the power device and could lead to power device failure.
Figure 9: UVLO protection
Shoot-Through Protection The IRS26302DJ is equipped with shoot-through protection circuitry (also known as cross-conduction prevention circuitry). Figure 10 shows how this protection circuitry prevents both the high- and low-side switches from conducting at the same time. Table 1 illustrates the input/output relationship of the devices in the form of a truth table. Note that the IRS26302DJ has non-inverting inputs (the output is in-phase with its respective input).
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IRS26302DJ
Figure 10: Illustration of shoot-through protection circuitry
HIN 0 0 1 1
LIN 0 1 0 1
HO 0 0 1 0
LO 0 1 0 0
Table 1: Input/output truth table
Enable Input The IRS26302DJ is equipped with an enable input pin that is used to shutdown or enable the HVIC. When the EN pin is in the high state the HVIC is able to operate normally (assuming no other fault conditions). When a condition occurs that should shutdown the HVIC, the EN pin should see a low logic state. The enable circuitry of the IRS26302DJ features an input filter; the minimum input duration is specified by tFILTER,EN. Please refer to the EN pin parameters VEN,TH+, VEN,TH-, and IEN for the details of its use. Table 2 gives a summary of this pin's functionality and Figure 11 illustrates the outputs' response to a shutdown command.
Enable Input Enable input high Enable input low Outputs enabled
*
Outputs disabled
Table 2: Enable functionality truth table (*assumes no other fault condition)
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IRS26302DJ
Figure 11: Output enable/disable timing waveform
Fault Reporting and Programmable Fault Clear Timer The IRS26302DJ provides an integrated fault reporting output and an adjustable fault clear timer. There are several situations that would cause the HVIC to report a fault via the FAULT pin: an undervoltage condition of VCC or ITRIP, Ground Fault (GF), PCFtrip pin recognizes an overcurrent. Once the fault condition occurs, the FAULT pin is internally pulled to VSS and the fault clear timer is activated. The fault output stays in the low state until the fault condition has been removed and the fault clear timer expires; once the fault clear timer expires, the voltage on the FAULT pin will return to VCC. The length of the fault clear time period (tFLTCLR) is determined by exponential charging characteristics of the capacitor where the time constant is set by RRCIN and CRCIN. In Figure 12 where we see that a fault condition has occurred (ITRIP), RCIN and FAULT are pulled to VSS, and once the fault has been removed, the fault clear timer begins. Figure 13 shows that RRCIN is connected between the VCC and the RCIN pin, while CRCIN is placed between the RCIN and VSS pins.
Figure 12: RCIN and FAULT pin waveforms The design guidelines for this network are shown in Table 3. CRCIN RRCIN
Figure 13: Programming the fault clear timer
1 nF, ceramic 0.5 M to 2 M
>> RON,RCIN
Table 3: Design guidelines
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The length of the fault clear time period can be determined by using the formula below. vC(t) = Vf(1-e
-t/RC
)
tFLTCLR = -(RRCINCRCIN)ln(1-VRCIN,TH/VCC) Over-Current Protections The IRS26302DJ HVICs are equipped with an ITRIP, GF and PFCtrip input pin. These functionality can be used to detect over-current events in the DC- bus, in the DC+ bus, in the PFC section and Ground related. Once the HVIC detects an over-current event, the outputs are shutdown, a fault is reported through the FAULT pin, and RCIN is pulled to VSS. The level of current at which the over-current protection is initiated is determined by the resistor network (i.e., R0, R1, and R2) connected to ITRIP as shown in Figure 14, and the ITRIP threshold (VIT,TH+). The circuit designer will need to determine the maximum allowable level of current in the DC- bus and select R0, R1, and R2 such that the voltage at node VX reaches the over-current threshold (VIT,TH+) at that current level. VIT,TH+ = R0IDC-(R1/(R1+R2))
Figure 14: Programming the over-current protection For example, a typical value for resistor R0 could be 50 m . The voltage of the ITRIP pin should not be allowed to exceed 5 V; if necessary, an external voltage clamp may be used. The shunt resistor or resistor network for GF or PCFtrip can be determined according to GF, PCFtrip threshold and level of protection current. The GF pin should not be outside this range (VDC+0.3V, VDC-5V) and PCFtrip should not be outside (Vcc+0.3V, Vss-5V); if necessary, an external voltage clamp may be used.
Over-Temperature Shutdown Protection The ITRIP input of the IRS26302DJ can also be used to detect over-temperature events in the system and initiate a shutdown of the HVIC (and power switches) at that time. In order to use this functionality, the circuit designer will need to design the resistor network as shown in Figure 15 and select the maximum allowable temperature. This network consists of a thermistor and two standard resistors R3 and R4. As the temperature changes, the resistance of the thermistor will change; this will result in a change of voltage at node VX. The resistor values should
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be selected such the voltage VX should reach the threshold voltage (VIT,TH+) of the ITRIP functionality by the time that the maximum allowable temperature is reached. The voltage of the ITRIP pin should not be allowed to exceed 5 V. When using both the over-current protection and over-temperature protection with the ITRIP input, OR-ing diodes (e.g., DL4148) can be used. This network is shown in Figure 16; the OR-ing diodes have been labeled D1 and D2.
Figure 15: Programming over-temperature protection
Figure 16: Using over-current protection and overtemperature protection
Truth Table: Undervoltage lockout, ITRIP, GF, PCFtrip and ENABLE Table 4 provides the truth table for the IRS26302DJ. The first line shows that the UVLO for VCC has been tripped; the FAULT output has gone low and the gate drive outputs have been disabled. VCCUV is not latched in this case and when VCC is greater than VCCUV, the FAULT output returns to the high impedance state. The second case shows that the UVLO for VBS has been tripped and that the high-side gate drive outputs have been disabled. After VBS exceeds the VBSUV threshold, HO will stay low until the HVIC input receives a new rising transition of HIN. The third case shows the normal operation of the HVIC. The fourth case illustrates that the ITRIP trip threshold has been reached and that the gate drive outputs have been disabled and a fault has been reported through the fault pin. Same behavior if GF or PCFtrip threshold has been reached. In the last case, the HVIC has received a command through the EN input to shutdown; as a result, the gate drive outputs have been disabled. VCC UVLO VCC UVLO VBS Normal operation ITRIP fault GF PCFtrip EN 15 V 15 V 15 V 15 V 15 V
0V >VITRIP 0V 0V 0V
0V 0V < GFth 0V 0V
0V 0V 0V 5V 5V 5V 5V 0V
High Low Low Low High
High Z 0 0 0 High Z
LIN 0 0 0 0
HIN 0 0 0 0
PCFIN 0 0 0 0
Table 4: IRS26302DJ UVLO, ITRIP, GF, PCFtrip, EN, RCIN, & FAULT truth table
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Fault Diagnostic: DIAG STATE -State Diagram After each fault event a diagnostic feature, if enable, can communicate to the controller which fault happened in the system (UVcc, ITRIP, GF, PCFtrip). If diagnostic is enabled forcing all HIN and all LIN = High the HVIC enters in handshake mode, all the outputs remain off, the automatic fault clear function is disabled and FLT/EN is in HZ (refer to Figure 17 for more details). The HVIC fault register is now ready for queries. A procedure to interrogate the fault register is depicted in the fault query routine (Figure 18).
One FLT/EN pin and DIAG mode operation for all fault condition
LIN1,2,3 Linx ALL=H Linx Lin1=L Lin2, 3=H Lin1=L Lin2, 3=H Linx Lin2=L Lin1, 3=H Lin2=L Lin1, 3=H Linx Lin3=L Lin1,2=H Lin3=L Lin1,2=H Linx Lin1,2=L Lin3=H Lin1,2=L Lin3=H HIN1,2 ,3 Hinx ALL H Hinx ALL H ALL H Hinx ALL H ALL H Hinx ALL H ALL H Hinx ALL H ALL H PFCin/BRin PFCinx/BRinx PFCinx/BRinx PFCinx/BRinx PFCinx/BRinx PFCinx/BRinx PFCinx/BRinx PFCinx/BRinx PFCinx/BRinx PFCinx/BRinx PFCinx/BRinx PFCinx/BRinx PFCinx/BRinx PFCinx/BRinx PFCinx/BRinx Condi tion (0) (*) (*) (*) (*) (*) (*) (*) (*) RCIN HZ HZ 0 0 0 0 0 0 0 0 0 HZ 0 0 Itrip 0 V > Vth (**) V > Vth (**) 0 X X X X X X X X X PFCtrip GF VCC fault VCC > UVCC X X X X X X X X X VCC < UVCC VCC < UVCC VCC > UVCC EN/FLT HZ 0-> HZ (0) 0 0 HZ 0 0 HZ 0 0 HZ 0 0 HZ Lox 0 0 0 0 0 0 0 0 0 0 0 0 0 Hox 0 0 0 0 0 0 0 0 0 0 0 0 0 PFCout/ BRout 0 0 0 0 0 0 0 0 0 0 0 0 0
0 Fault register = 1 (**) X X X X X X V > Vth (**) V > Vth (**) 0 X X X X X X X X X V > Vth (**) V > Vth (**) 0 X X X
(0) HAND SHAKE SYNC (*) Operation available only in DIAL MODE. (**) Internal Register fault DIAG MODE available when FLT=0 Set DIAG MODE: Hinx=Linx=H During DIAG MODE operation Lox=Hox=0 PFCout/BRout=0 RCIN=0 Reset DIAG MODE: hold Linx=H Hinx=L
Figure 17: State Diagram
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HANDSHAKE mode Fault query start
Set LIN1=L, LIN2,3=H;HINx=H Wait tDIAGIN
FLT/EN = 0
YES
ITRIP FAULT
NO
Set LIN2=L, LIN1,3=H;HINx=H Wait tDIAGIN
FLT/EN = 0
YES
PFCtrip FAULT
NO
Set LIN3=L, LIN1,2=H;HINx=H Wait tDIAGIN
FLT/EN = 0
YES
GF FAULT
NO
Set LIN3=L, LIN1,2=H;HINx=H Wait tDIAGIN
FLT/EN = 0
YES
Uvcc FAULT
NO
Exit fault query
Figure 18: Fault Query Procedure
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IRS26302DJ
Advanced Input Filter The advanced input filter allows an improvement in the input/output pulse symmetry of the HVIC and helps to reject noise spikes and short pulses. This input filter has been applied to the HIN, LIN, PFCin and EN inputs. The working principle of the new filter is shown in Figures 19 and 20. Figure 19 shows a typical input filter and the asymmetry of the input and output. The upper pair of waveforms (Example 1) show an input signal with a duration much longer then tFIL,IN; the resulting output is approximately the difference between the input signal and tFIL,IN. The lower pair of waveforms (Example 2) show an input signal with a duration slightly longer then tFIL,IN; the resulting output is approximately the difference between the input signal and tFIL,IN. Figure 20 shows the advanced input filter and the symmetry between the input and output. The upper pair of waveforms (Example 1) show an input signal with a duration much longer then tFIL,IN; the resulting output is approximately the same duration as the input signal. The lower pair of waveforms (Example 2) show an input signal with a duration slightly longer then tFIL,IN; the resulting output is approximately the same duration as the input signal.
Figure 19: Typical input filter
Figure 20: Advanced input filter
Short-Pulse / Noise Rejection This device's input filter provides protection against short-pulses (e.g., noise) on the input lines. If the duration of the input signal is less than tFIL,IN, the output will not change states. Example 1 of Figure 21 shows the input and output in the low state with positive noise spikes of durations less than tFIL,IN; the output does not change states. Example 2 of Figure 21 shows the input and output in the high state with negative noise spikes of durations less than tFIL,IN; the output does not change states.
Example 2
Figure 21: Noise rejecting input filters
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Example 1
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Figures 22 and 23 present lab data that illustrates the characteristics of the input filters while receiving ON and OFF pulses. The input filter characteristic is shown in Figure 22; the left side illustrates the narrow pulse ON (short positive pulse) characteristic while the left shows the narrow pulse OFF (short negative pulse) characteristic. The x-axis of Figure 22 shows the duration of PW IN, while the y-axis shows the resulting PW OUT duration. It can be seen that for a PW IN duration less than tFIL,IN, that the resulting PW OUT duration is zero (e.g., the filter rejects the input signal/noise). We also see that once the PW IN duration exceed tFIL,IN, that the PW OUT durations mimic the PW IN durations very well over this interval with the symmetry improving as the duration increases. To ensure proper operation of the HVIC, it is suggested that the input pulse width for the high-side inputs be 500 ns. The difference between the PW OUT and PW IN signals of both the narrow ON and narrow OFF cases is shown in Figure 23; the careful reader will note the scale of the y-axis. The x-axis of Figure 21 shows the duration of PW IN, while the y-axis shows the resulting PW OUT-PW IN duration. This data illustrates the performance and near symmetry of this input filter.
Figure 22: IRS2336xD input filter characteristic
Figure 23: Difference between the input pulse and the output pulse
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Time (ns)
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Integrated Bootstrap Functionality The IRS26302DJ features integrated high-voltage bootstrap MOSFETs that eliminate the need of the external bootstrap diodes and resistors in many applications. There is one bootstrap MOSFET for each high-side output channel and it is connected between the VCC supply and its respective floating supply (i.e., VB1, VB2, VB3); see Figure 24 for an illustration of this internal connection. The integrated bootstrap MOSFET is turned on only during the time when LO is `high', and it has a limited source current due to RBS. The VBS voltage will be charged each cycle depending on the on-time of LO and the value of the CBS capacitor, the drain-source (collector-emitter) drop of the external IGBT (or MOSFET), and the low-side freewheeling diode drop. The bootstrap MOSFET of each channel follows the state of the respective low-side output stage (i.e., the bootstrap MOSFET is ON when LO is high, it is OFF when LO is low), unless the VB voltage is higher than approximately 110% of VCC. In that case, the bootstrap MOSFET is designed to remain off until VB returns below that threshold; this concept is illustrated in Figure 25.
VB1 VCC VB2
VB3
Figure 24: Internal bootstrap MOSFET connection
Figure 25: Bootstrap MOSFET state diagram
A bootstrap MOSFET is suitable for most of the PWM modulation schemes and can be used either in parallel with the external bootstrap network (i.e., diode and resistor) or as a replacement of it. The use of the integrated bootstrap as a replacement of the external bootstrap network may have some limitations. An example of this limitation may arise when this functionality is used in non-complementary PWM schemes (typically 6-step modulations) and at very high PWM duty cycle. In these cases, superior performances can be achieved by using an external bootstrap diode in parallel with the internal bootstrap network.
Bootstrap Power Supply Design For information related to the design of the bootstrap power supply while using the integrated bootstrap functionality of the IRS26302DJ, please refer to Application Note 1123 (AN-1123) entitled "Bootstrap Network Analysis: Focusing on the Integrated Bootstrap Functionality." This application note is available at www.irf.com. For information related to the design of a standard bootstrap power supply (i.e., using an external discrete diode) please refer to Design Tip 04-4 (DT04-4) entitled "Using Monolithic High Voltage Gate Drivers." This design tip is available at www.irf.com.
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IRS26302DJ
Separate Logic and Power Grounds The IRS26302DJ has separate logic and power ground pin (VSS and COM respectively) to eliminate some of the noise problems that can occur in power conversion applications. Current sensing shunts are commonly used in many applications for power inverter protection (i.e., over-current protection), and in the case of motor drive applications, for motor current measurements. In these situations, it is often beneficial to separate the logic and power grounds. Figure 26 shows a HVIC with separate VSS and COM pins and how these two grounds are used in the system. The VSS is used as the reference point for the logic and over-current circuitry; VX in the figure is the voltage between the ITRIP pin and the VSS pin. Alternatively, the COM pin is the reference point for the low-side gate drive circuitry. The output voltage used to drive the low-side gate is VLO-COM; the gate-emitter voltage (VGE) of the low-side switch is the output voltage of the driver minus the drop across RG,LO.
DC+ BUS
DBS VCC VB (x3) CBS HO (x3) RG,HO
VS (x3) LO (x3)
HVIC
ITRIP VSS
VS1
VS2
VS3
RG,LO + + + -
VGE1
COM
VGE2
VGE3
-
R2 R0
+
VX
-
R1
DC- BUS
Figure 26: Separate VSS and COM pins Tolerant to Negative VS Transients A common problem in today's high-power switching converters is the transient response of the switch node's voltage as the power switches transition on and off quickly while carrying a large current. A typical 3-phase inverter circuit is shown in Figure 27; here we define the power switches and diodes of the inverter. If the high-side switch (e.g., the IGBT Q1 in Figures 28 and 29) switches off, while the U phase current is flowing to an inductive load, a current commutation occurs from high-side switch (Q1) to the diode (D2) in parallel with the lowside switch of the same inverter leg. At the same instance, the voltage node VS1, swings from the positive DC bus voltage to the negative DC bus voltage.
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IRS26302DJ
Figure 27: Three phase inverter
DC+ BUS
Q1 ON IU VS1 D2
Q2 OFF
DC- BUS
Figure 28: Q1 conducting
Figure 29: D2 conducting
Also when the V phase current flows from the inductive load back to the inverter (see Figures 30 and 31), and Q4 IGBT switches on, the current commutation occurs from D3 to Q4. At the same instance, the voltage node, VS2, swings from the positive DC bus voltage to the negative DC bus voltage.
Figure 30: D3 conducting
Figure 31: Q4 conducting
However, in a real inverter circuit, the VS voltage swing does not stop at the level of the negative DC bus, rather it swings below the level of the negative DC bus. This undershoot voltage is called "negative VS transient". The circuit shown in Figure 32 depicts one leg of the three phase inverter; Figures 33 and 34 show a simplified illustration of the commutation of the current between Q1 and D2. The parasitic inductances in the power circuit from the die bonding to the PCB tracks are lumped together in LC and LE for each IGBT. When the high-side switch is on,
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VS1 is below the DC+ voltage by the voltage drops associated with the power switch and the parasitic elements of the circuit. When the high-side power switch turns off, the load current momentarily flows in the low-side freewheeling diode due to the inductive load connected to VS1 (the load is not shown in these figures). This current flows from the DC- bus (which is connected to the COM pin of the HVIC) to the load and a negative voltage between VS1 and the DC- Bus is induced (i.e., the COM pin of the HVIC is at a higher potential than the VS pin).
Figure 32: Parasitic Elements
Figure 33: VS positive
Figure 34: VS negative
In a typical motor drive system, dV/dt is typically designed to be in the range of 3-5 V/ns. The negative VS transient voltage can exceed this range during some events such as short circuit and over-current shutdown, when di/dt is greater than in normal operation. International Rectifier's HVICs have been designed for the robustness required in many of today's demanding applications. The IRS26302DJ has been seen to withstand large negative VS transient conditions on the order of -50 V for a period of 50 ns. An illustration of the IRS26302DJ's performance can be seen in Figure 35. This experiment was conducted using various loads to create this condition; the curve shown in this figure illustrates the successful operation of the IRS26302DJ under these stressful conditions. In case of -VS transients greater then -20 V for a period of time greater than 100 ns; the HVIC is designed to hold the high-side outputs in the off state for 4.5 s in order to ensure that the high- and low-side power switches are not on at the same time.
Figure 35: Negative VS transient results for an International Rectifier HVIC Even though the IRS26302DJ has been shown able to handle these large negative VS transient conditions, it is highly recommended that the circuit designer always limit the negative VS transients as much as possible by careful PCB layout and component use.
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IRS26302DJ
PCB Layout Tips Distance between high and low voltage components: It's strongly recommended to place the components tied to the floating voltage pins (VB and VS) near the respective high voltage portions of the device. The IRS26302DJ in the PLCC44 package has had some unused pins removed in order to maximize the distance between the high voltage and low voltage pins. Please see the Case Outline PLCC44 information in this datasheet for the details. Ground Plane: In order to minimize noise coupling, the ground plane should not be placed under or near the high voltage floating side. Gate Drive Loops: Current loops behave like antennas and are able to receive and transmit EM noise (see Figure 36). In order to reduce the EM coupling and improve the power switch turn on/off performance, the gate drive loops must be reduced as much as possible. Moreover, current can be injected inside the gate drive loop via the IGBT collector-to-gate parasitic capacitance. The parasitic auto-inductance of the gate loop contributes to developing a voltage across the gate-emitter, thus increasing the possibility of a self turn-on effect.
Figure 36: Antenna Loops Supply Capacitor: It is recommended to place a bypass capacitor (CIN) between the VCC and VSS pins. connection is shown in Figure 37. A ceramic 1 F ceramic capacitor is suitable for most applications. component should be placed as close as possible to the pins in order to reduce parasitic elements. This This
Figure 37: Supply capacitor
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IRS26302DJ
Routing and Placement: Power stage PCB parasitic elements can contribute to large negative voltage transients at the switch node; it is recommended to limit the phase voltage negative transients. In order to avoid such conditions, it is recommended to 1) minimize the high-side emitter to low-side collector distance, and 2) minimize the low-side emitter to negative bus rail stray inductance. However, where negative VS spikes remain excessive, further steps may be taken to reduce the spike. This includes placing a resistor (5 or less) between the VS pin and the switch node (see Figure 36), and in some cases using a clamping diode between VSS and VS (see Figure 39). See DT04-4 at www.irf.com for more detailed information.
Figure 38: VS resistor Additional Documentation
Figure 39: VS clamping diode
Several technical documents related to the use of HVICs are available at www.irf.com; use the Site Search function and the document number to quickly locate them. Below is a short list of some of these documents. DT97-3: Managing Transients in Control IC Driven Power Stages AN-1123: Bootstrap Network Analysis: Focusing on the Integrated Bootstrap Functionality DT04-4: Using Monolithic High Voltage Gate Drivers AN-978: HV Floating MOS-Gate Driver ICs
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IRS26302DJ
Parameter Temperature Trends
Figures 40-115 provide information on the experimental performance of the IRS26302DJ HVIC. The line plotted in each figure is generated from actual lab data. A large number of individual samples were tested at three temperatures (-40 C, 25 C, and 125 C) in order to generate the experimental (Exp.) curve. The line labeled Exp. consist of three data points (one data point at each of the tested temperatures) that have been connected together to illustrate the understood trend. The individual data points on the curve were determined by calculating the averaged experimental value of the parameter (for a given temperature).
0.35
10.5 llk (uA) 8.4 6.3 4.2
Exp.
0.30 0.25 Lin- (uA) 0.20 0.15 0.10 0.05
Exp.
2.1 0.0 -50 -25 0 25 50
o
75
100
125
0.00 -50 -25 0 25 50 75 o Temperature ( C) 100 125
Temperature ( C)
Fig. 40. Offset Supply Leakage Current vs. Temperature
1500.00 1200.00 900.00 600.00 300.00 0.00 -50 -25 0 25 50 75 100 125 Temperature (oC) Exp .
Fig. 41. Input Bias Current vs. Temperature
0.05 0.04 IRCIN (uA) 0.03 0.02
Exp.
Lin+ (uA)
0.01 0.00 -0.01 -50
-25
0
25
50
o
75
100
125
Temperature ( C)
Fig. 42. Input Bias Current vs. Temperature
Fig. 43. RCIN Input Bias Current vs. Temperature
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30.60 25.50 Ipfctrip+ (uA) 20.40
Exp.
0.70 0.60
Ipfctrip- (uA)
0.50 0.40 0.30 0.20 0.10 0.00
Exp.
15.30 10.20 5.10 0.00 -50
-25
0
25
50
o
75
100
125
-50
-25
0
25
50
o
75
100
125
Temperature ( C)
Temperature ( C)
Fig. 44. PFCTRIP Input Bias Current vs. Temperature
0.06 0.05
Fig. 45. PFCTRIP Input Bias Current vs. Temperature
2.00 1.60 Iitrip+ (uA) 1.20
Exp.
0.04
Exp.
Iitrip- (uA)
0.03 0.02 0.01 0.00 -50 -25 0 25 50
o
0.80 0.40 0.00
75
100
125
-50
-25
0
25
50
o
75
100
125
Temperature ( C)
Temperature ( C)
Fig. 46. ITRIP Input Bias Current vs. Temperature
Fig. 47. ITRIP Input Bias Current vs. Temperature
5.00
100 80
3.75
IQCC (mA)
IQBS (uA)
60
Exp.
Exp.
2.50
40 20 0
1.25
0.00 -50 -25 0 25 50
o
75
100
125
-50
-25
0
25
50
75
100
125
Temperature ( C)
Temperature (oC)
Fig. 48. Quiescent VCC Supply Current vs. Temperature
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Fig. 49. Quiescent VBS Supply Current vs. Temperature
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IRS26302DJ
1000 800 LOtoff (ns)
Exp.
Exp.
1000 800 600 400 200 0 -50 -25 0 25 50
o
600 400 200 0
LOton (ns)
75
100
125
-50
-25
0
25
50
o
75
100
125
Temperature ( C)
Temperature ( C)
Fig. 50. Turn-On Propagation Delay vs. Temperature
200
Fig. 51. Turn-Off Propagation Delay vs. Temperature
70 60
150 LOtr (ns)
Exp.
50 Lotoff (ns) 40
Exp.
100
30 20 10
50
0 -50 -25 0 25 50
o
0
75 100 125
-50
-25
0
25
50
o
75
100
125
Temperature ( C)
Temperature ( C)
Fig. 52. Turn-On Rise Time vs. Temperature
1000 800 600 400 200 0 -50 -25 0 25 50
o
Fig. 53. Turn-Off Fall Time vs. Temperature
1000 800 HOtoff (ns)
Exp.
Exp.
HOton (ns)
600 400 200 0 -50 -25 0 25 50
o
75
100
125
75
100
125
Temperature ( C)
Temperature ( C)
Fig. 54. Turn-On Propagation Delay vs. Temperature
Fig. 55. Turn-Off Propagation Delay vs. Temperature
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IRS26302DJ
200 160 120 Hotr (ns)
Exp.
60 50 HOtff (ns) 40
Exp.
30 20 10 0
80 40 0 -50 -25 0 25 50
o
75
100
125
-50
-25
0
25
50
o
75
100
125
Temperature ( C)
Temperature ( C)
Fig. 56. Turn-On Rise Time vs. Temperature
1000 800 PFCton (ns)
Fig. 57. Turn-Off Fall Time vs. Temperature
1000 800 PFCtoff (ns) 600 400 200 0
Exp.
600
Exp.
400 200 0 -50 -25 0 25 50
o
75
100
125
-50
-25
0
25
50
o
75
100
125
Temperature ( C)
Temperature ( C)
Fig. 58. Turn-On Propagation Delay vs. Temperature
100 80 PFCtf (ns) 60
Fig. 59. Turn-Off Propagation Delay vs. Temperature
300 250 200 PFCtr (ns) 150 100
Exp.
Exp.
40 20
50 0 -50 -25 0 25 50
o
0 -50
75 100 125 Temperature ( C)
-25
0
25
50
o
75
100
125
Temperature ( C)
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Fig. 60. Turn-On Rise Time vs. Temperature 38
Fig. 61. Turn-Off Fall Time vs. Temperature
(c) 2009 International Rectifier
IRS26302DJ
600
50 40
Exp.
450 DT (ns) MT (ns)
30 20 10
Exp.
300
150
0 -50
-25
0
25
50
o
75
100
125
0 -50 -25 0 25 50 75 o Temperature ( C) 100 125
Temperature ( C)
Fig. 62. Deadtime Rise Time vs. Temperature
50 40 MDT(ns) PM (ns) 30
Exp.
Fig. 63. Ton, Off Matching Time vs. Temperature
50 40 30
Exp.
20 10 0 -50 -25 0 25 50
o
20 10 0
75
100
125
-50
-25
0
25
50
o
75
100
125
Temperature ( C)
Temperature ( C)
Fig. 64. Deadtime Matching vs. Temperature
Fig. 65. Pulse Width Distortion vs. Temperature
600 500 TitripFlt (ns) Tfilin (ns) 400 300 200 100 0 -50
Exp.
2000 1600
Exp.
1200 800 400 0
-25
0
25
50
o
75
100
125
-50
-25
0
25
50
o
75
100
125
Temperature ( C)
Temperature ( C)
Fig. 66. Input Filter Time vs. Temperature
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Fig. 67. ITRIP to Fault Time vs. Temperature
(c) 2009 International Rectifier
39
IRS26302DJ
1500 1250 TitripOut (ns) 1000 750 500 250 0 -50 -25 0 25 50
o
1500 1250 1000 TitripPfc (ns)
Exp.
750 500 250 0
Exp.
75
100
125
-50
-25
0
25
50
o
75
100
125
Temperature ( C)
Temperature ( C)
Fig. 68. ITRIP to Output Shutdown Propagation Delay vs. Temperature
100 80
Fig. 69. ITRIP to PFCOUT Shutdown Propagation Delay vs. Temperature
1000 800 Titripblk (ns)
Exp.
Tfltclr (us)
60 40 20 0 -50
600
Exp.
400 200 0
-25
0
25
50
o
75
100
125
-50
-25
0
25
50
o
75
100
125
Temperature ( C)
Temperature ( C)
Fig. 70. FAULT Clear Time RCIN vs. Temperature
2000 1600 TpfctripFlt (ns) 1200 800 400 0 -50 -25 0 25 50
o
Fig. 71. ITRIP Blanking Time vs. Temperature
1000 800 600 400 200 0 75 100 125 -50 -25 0 25 50
o
Exp.
Exp.
TpfctripOut (ns)
75
100
125
Temperature ( C)
Temperature ( C)
Fig. 72. PFCTRIP to Fault Time vs. Temperature
Fig. 73. PFCTRIP to Output Shutdown Propagation Delay vs. Temperature
(c) 2009 International Rectifier
www.irf.com
40
IRS26302DJ
1000 800
Tfltclr (us)
100 80
Exp.
TpfctripPfc (ns)
600
Exp.
60 40 20
400 200
0
0 -50 -25 0 25 50
o
-50
-25
0
25
50
o
75
100
125
75
100
125
Temperature ( C)
Temperature ( C)
Fig. 74. PFCTRIP to PFC Output Shutdown Propagation Delay vs. Temperature
750 600 TgftripFlt (ns) 450 300 150 0 -50 2500 2000
Fig. 75. FAULT Clear Time RCIN vs. Temperature
Tpfctripblk (ns)
Exp.
1500 1000 500 0
Exp.
-25
0
25
50
o
75
100
125
-50
-25
0
25
50
o
75
100
125
Temperature ( C)
Temperature ( C)
Fig. 76. PFCTRIP Blanking Time vs. Temperature
2500 2000 TgftripOut (ns) 1500
Exp.
Fig. 77. GFTRIP to Fault Time vs. Temperature
2500 2000 TgftripPfc (ns) 1500
Exp.
1000 500 0 -50 -25 0 25 50
o
1000 500 0 -50
75
100
125
-25
0
25
50
o
75
100
125
Temperature ( C)
Temperature ( C)
Fig. 78. GFTRIP to Output Shutdown Propagation Delay vs. Temperature
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Fig. 79. GFTRIP to PFC Output Shutdown Propagation Delay vs.
(c) 2009 International Rectifier
41
IRS26302DJ
1000
1000
800 TgftripBlk (ns)
Exp.
800 TenOut (ns) 600 400 200 0
Exp.
600 400 200 0 -50 -25 0 25 50
o
75
100
125
-50
-25
0
25
50
o
75
100
125
Temperature ( C)
Temperature ( C)
Fig. 80. GFTRIP Blanking Time vs. Temperature
1000 800
Fig. 81. EN On to Output Propagation Delay vs. Temperature
500 400 TfilterEn (ns) 300
Exp.
TsdOut (ns)
600
Exp.
400 200 0 -50 -25 0 25 50
o
200 100 0 -50
75
100
125
-25
0
25
50
o
75
100
125
Temperature ( C)
Temperature ( C)
Fig. 82. EN Off to Output Shutdown Propagation Delay vs. Temperature
500 400
Exp.
Fig. 83. Enable Input Filter Time vs. Temperature
750 600 TsdPfc (ns) 450
Exp.
TenPfc (ns)
300 200 100 0 -50
300 150 0 -50
-25
0
25
50
o
75
100
125
-25
0
25
50
o
75
100
125
Temperature ( C)
Temperature ( C)
Fig. 84. EN On to PFC Output Propagation Delay vs. Temperature
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Fig. 85. EN off to Output Shutdown PFC Propagation Delay vs. Temperature
(c) 2009 International Rectifier
42
IRS26302DJ
1000 Tnandshake (ns) 800 600 400 200
1000 800 TdiagIN (ns)
Exp.
600 400 200
Exp.
0 -50 -25 0 25 50
o
75
100
125
Temperature ( C)
0 -50
-25
0
25
50
o
75
100
125
Temperature ( C)
Fig. 86. Input to Hand Shake Mode Delay vs. Temperature
1000 800 PfcIo+ (mA) 600 400 200 0 -50 -25 0 25 50
o
Fig. 87. Input to DIAG Mode in Delay vs. Temperature
1000 800 600 400
Exp.
TdiagOUT (ns)
Exp.
200 0 75 100 125 -50 -25 0 25 50
o
75
100
125
Temperature ( C)
Temperature ( C)
Fig. 88. Input to DIAG Mode Out Delay vs. Temperature
500 400 Io+ (mA) 300
Exp.
Fig. 89. Output High Short Circuit Pulsed Current PFCOUT vs. Temperature
500 400
Exp.
Io- (mA) -25 0 25 50
o
300 200 100 0 -50
200 100 0 -50
75
100
125
-25
0
25
50
o
75
100
125
Temperature ( C)
Temperature ( C)
Fig. 90. Output High Short Circuit Pulsed Current, HO1,2,3 vs. Temperature
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Fig. 91. Output Low Short Circuit Pulsed Current, HO1,2,3 vs. Temperature
(c) 2009 International Rectifier
43
IRS26302DJ
1000 Ron_RCIN (ohm) 800 PfcIo- (mA) 600 400 200 0 -50 -25 0 25 50
o
100 80 60
Exp.
Exp.
40 20 0 -50
75
100
125
-25
0
25
50
75
100
125
Temperature ( C)
Temperature (oC)
Fig. 92. Output Low Short Circuit Pulsed Current, PFCOUT vs. Temperature
100 80 Ron_Flt (ohm) Vin,th- (V) 60 40 20 0 -50 -25 0 25 50 75 100 125 Temperature (oC) Exp. 2.50 2.00 1.50
Fig. 93. RCIN Low On Resistance vs. Temperature
Exp. 1.00 0.50 0.00 -50 -25 0 25 50 75 100 125 Temperature (oC)
Fig. 94. FLT Low On Resistance vs. Temperature
3.00 2.50 Vin,th+ (V) 2.00 1.50 1.00 0.50 0.00 -50 -25 0 25 50 75 100 125 Temperature (oC) Vitrip,th- (V) Exp.
Fig. 95. Input Negative Going Threshold vs. Temperature
0.50 0.40 0.30 0.20 0.10 0.00 -50 -25 0 25 50 75 100 125 Temperature (oC) Exp.
Fig. 96. Input Positive Going Threshold vs. Temperature
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Fig. 97. Input Negative Going Threshold vs. Temperature
(c) 2009 International Rectifier
44
IRS26302DJ
0.50 0.40 0.30 Exp. 0.20 0.10 0.00 -50 -25 0 25 50 75 100 125 Temperature (oC)
0.50 0.40 Vpfctrip,th- (V) 0.30 Exp. 0.20 0.10 0.00 -50 -25 0 25 50 75 100 125 Temperature (oC)
Vitrip,th+ (V)
Fig. 98. Input Positive Going Threshold vs. Temperature
0.50
Fig. 99. PFC Negative Going Threshold vs. Temperature
0.50
0.40 Vpfctrip,th+ (V) Vgf,th- (V) 0.30 0.20 0.10 0.00 -50 -25 0 25 50 75 100 125 Temperature (oC) Exp.
0.40
0.30 Exp. 0.20
0.10
0.00 -50 -25 0 25 50 75 100 125 Temperature (oC)
Fig. 100. PFC Positive Going Threshold vs. Temperature
0.50
Fig. 101. GF Negative Going Threshold vs. Temperature
15.00 12.00 VRCin,th+ (V) 9.00 6.00 3.00 0.00 Exp.
0.40 Vgf,th+ (V) 0.30
0.20 Exp. 0.10
0.00 -50 -25 0 25 50 75 Temperature (oC) 100 125
-50
-25
0
25
50
75
100
125
Temperature (oC)
Fig. 102. GF Positive Going Threshold vs. Temperature
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Fig. 103. RCIN Positive Going Threshold vs. Temperature
(c) 2009 International Rectifier
45
IRS26302DJ
20.00 16.00 Vcc,UVth- (V) 12.00 8.00 4.00 0.00 -50 -25 0 25 50 75 100 125
20.00 16.00
Exp.
Vcc,UVth+ (V)
12.00 8.00
Exp.
4.00 0.00 -50 -25 0 25 50 75 100 125 Temperature (oC)
Temperature (oC)
Fig. 104. VCC Supply Undervoltage Negative Going Threshold vs. Temperature
0.50 0.40 Vcc,Uvhys (V) 0.30 Exp. 0.20 0.10 0.00 -50 -25 0 25 50 75 100 125 Temperature (oC) Vbs,Uvhys (V)
Fig. 105. VCC Supply Undervoltage Positive Going Threshold vs. Temperature
0.40
0.30 Exp. 0.20
0.10
0.00 -50 -25 0 25 50 75 100 125 Temperature (oC)
Fig. 106. VCC Supply Undervoltage Hysteresis vs. Temperature
25.00 20.00 15.00 Exp. 10.00 5.00 0.00 -50 -25 0 25 50 75 100 125 Temperature (oC) Vbs,Uvth+ (V) Vbs,UVth- (V) 25.00
Fig. 107. VBS Supply Undervoltage Hysteresis vs. Temperature
20.00 15.00 Exp. 10.00 5.00
0.00 -50 -25 0 25 50 75 100 125 Temperature (oC)
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Fig. 108. VBS Supply Undervoltage Negative Going Threshold vs. Temperature 46
Fig. 109. VBS Supply Undervoltage Positive Going Threshold vs. Temperature
(c) 2009 International Rectifier
IRS26302DJ
250.00 200.00 VpfcL (mV) 150.00 Exp. 100.00 50.00 VpfcH (mV)
1000.00
800.00
600.00 400.00 Exp. 200.00
0.00 -50 -25 0 25 50 75 100 125 0.00 -50 -25 0 25 50 75 Temperature (oC) 100 125 Temperature (oC)
Fig. 110. Low Level Output Voltage, VBIAS VO, PFCOUT vs. Temperature
500.00 400.00 VOL (mV)
Fig. 111. High Level Output Voltage, VBIAS VO, PFCOUT vs. Temperature
1750.00 1400.00 VOH (mV) 1050.00 700.00 Exp. 350.00 0.00
300.00 200.00 100.00 0.00 -50 -25 0 25 50 75 100 125 Temperature (oC) Exp.
-50
-25
0
25
50
75
100
125
Temperature (oC)
Fig. 112. Low Level Output Voltage, VO, HO1,2,3 vs. Temperature
700.00
Fig. 113. High Level Output Voltage, VBIAS VO, HO1,2,3 vs. Temperature
0.05 0.04
IENin (uA)
525.00 RBS (ohm)
0.03 0.02
350.00
175.00
Exp.
Exp.
0.01 0.00 -50
0.00 -50 -25 0 25 50 75 100 125 Temperature (oC)
-25
0
25
50
o
75
100
125
Temperature ( C)
Fig. 114. Ron Internal Bootstrap Diode vs. Temperature
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Fig. 115. En Input Bias Current vs. Temperature
(c) 2009 International Rectifier
47
IRS26302DJ
Package Details: PLCC44
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(c) 2009 International Rectifier
48
IRS26302DJ
Tape and Reel Details: PLCC44
LOADED TAPE FEED DIRECTION B A H
D F C
NOTE : CONTROLLING DIM ENSION IN M M
E G
CARRIER TAPE DIMENSION FOR 44PLCC Metric Imperial Code Min Max Min Max A 23.90 24.10 0.94 0.948 B 3.90 4.10 0.153 0.161 C 31.70 32.30 1.248 1.271 D 14.10 14.30 0.555 0.562 E 17.90 18.10 0.704 0.712 F 17.90 18.10 0.704 0.712 G 2.00 n/a 0.078 n/a H 1.50 1.60 0.059 0.062
F
D C E B A
G
H
REEL DIMENSIONS FOR 44PLCC Metric Code Min Max A 329.60 330.25 B 20.95 21.45 C 12.80 13.20 D 1.95 2.45 E 98.00 102.00 F n/a 38.4 G 34.7 35.8 H 32.6 33.1
Imperial Min Max 12.976 13.001 0.824 0.844 0.503 0.519 0.767 0.096 3.858 4.015 n/a 1.511 1.366 1.409 1.283 1.303
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(c) 2009 International Rectifier
49
IRS26302DJ
Part Marking Information
www.irf.com
(c) 2009 International Rectifier
50
IRS26302DJ
Ordering Information
Standard Pack Base Part Number Package Type Form IRS26302DJ PLCC44 Tube/Bulk Tape and Reel Quantity 27 500 IRS26302DJPBF IRS26302DJTRPBF Complete Part Number
The information provided in this document is believed to be accurate and reliable. However, International Rectifier assumes no responsibility for the consequences of the use of this information. International Rectifier assumes no responsibility for any infringement of patents or of other rights of third parties which may result from the use of this information. No license is granted by implication or otherwise under any patent or patent rights of International Rectifier. The specifications mentioned in this document are subject to change without notice. This document supersedes and replaces all information previously supplied.
For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
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(c) 2009 International Rectifier
51

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